As for the power semiconductor business, Toshiba showed their to win the throne of market share in a recent conference. Because it is said that power semiconductors for the social infrastructure and automotive grow substantially, so Toshiba's chief executive executive director, president of a small semiconductor and memory ,Lin Chi said, "We will invest significant resources in power, hoping within a throne of the industry, ahead of other companies within few years. " Currently, the industry's market share for toshiba ranks in the third. Toshiba are ready to make self-developed technology and components as large diameter of the source of competitiveness, to increase market share.
According to reports, for power semiconductors, materials for low voltage and high voltage products in 2011, all new components will be constructed for toshiba in order to create efficient electric power conversion products. For example, low-voltage MOSFET will change the original "UMOS-type" to the new structure, and high-voltage MOSFET technology will be imported with Toshiba's own experience SingleEpi construct super-junction (SuperJunction) MOS. It is reported that, IGBT's voltage will use the thin part of the new structure. In addition, for the work required the use of such high frequency, Toshiba is developing the use of new materials such as SiC and GaN power semiconductors.
Considering the future,Toshiba will change NAND flash memory base to the power base of Kaga semiconductor factory in order to achieve big caliber of and capacity improvement with a small amount of equipment investment . As a result, the 200mm wafer production capacity in the power semiconductor proportion will be increased to 80% in 2013 or more. And, because of the same year, Kaga plant's existing production lines will reach full capacity ,it is estimated that the new plant will be needed to build. Regarding the latter process,Toshiba  will transfer 80% of annual production in 2012d, 90% of annual production in 2013 to overseas to reduce production costs.