Chinese researchers on the 8th in the U.S. "Science" magazine reported that their basic unit of transistors in an integrated circuit research breakthroughs invented a semi-floating gate transistor called a new basis for microelectronic devices, allowing data rewritable more easily and quickly, the whole process can be completed in a low voltage condition for the realization of the chip to create the conditions for low-power operation.Study leader, Fudan University, Professor Wang Pengfei right Xinhua News Agency correspondent, said: "China's IC industry rely mainly on introducing and absorbing foreign mature technology, microelectronic devices and integrated process core lack of core technology. Semi-floating gate transistor as a new based microelectronics devices, which will help the successful development of China has mastered the core technology of integrated circuits, resulting in chip design and manufacturing gradually get more right to speak. "According to Wang Pengfei introduction, metal - oxide - semiconductor field-effect transistor (MOSFET) is integrated in the mainstream devices, advances in technology over the past few decades so that MOSFET transistors continue to shrink, more and more close to its physical limits, based on the new structures and new principles of transistor becomes the current industry need. Semi-floating gate transistor prospective studies in this case is expanded.He said, half-floating gate transistors are embedded in a broad MOSFET transistors for low-power circuit device - tunneling field effect transistor (TFET) is made. Semi-floating gate transistor has the advantage of a smaller volume can be more simple structure, read and write speed, and a transistor that is comparable to the efficacy of multiple MOSFET transistors.Semi-floating gate transistor can be applied to not only the memory, but also in active-type image sensor chip (APS), so that the new image sensor unit can be reduced in area, more than 20%, and to the resolution of the image sensor and the sensitivity is enhanced.For the industrial prospects of this technology, Wang Pengfei said that new devices often also need to go through in-depth study, performance optimization, etc. a lot of work in order to gradually achieve industrialization, now optimized for the device and circuit design work has already begun.